world geographical scheme for recording plant distribution, edition-2

TDWG was started in 1985 as an international working group to explore ideas on standardization and collaboration between major plant taxonomic database ...







2N2222 TO-92
Objective data sheet. Development. This document contains data from the objective specification for product development. Preliminary data sheet.
2N2219A / 2N2222A Datasheet - Mike's Electronic Parts
Characteristics at Ta = 25 OC. Parameter. Symbol. Min. Max. Unit. DC Current Gain at VCE = 10 V, IC = 0.1 mA at VCE = 10 V, IC = 1 mA.
MMBT2222A NPN switching transistor - Nexperia
Symbol 2N2222 2N2222A 2N5582. Unit ... FIGURE 10 CHARGE DATA. 1, = 25°C. 1/4=10 le = 10. Vec. = 5V (UNLESS NOTED! 2000. Vcc. 30 V. UNLESS NOTED. 1000. 50 td @VER[ ...
2N2222 / 2N2222A - SEMTECH ELECTRONICS LTD. - NET
DATA SHEET. Product specification. Supersedes data of September 1994. File under Discrete Semiconductors, SC04. 1997 May 29. DISCRETE SEMICONDUCTORS. 2N2222; ...
2N2218, A/2N2219, A 2N2221, A/2N2222, A 2N5581/82 - RPI ECSE
Vdc. Collector-Base Voltage. VCBO. 75. Vdc. Emitter-Base Voltage. VEBO. 6.0. Vdc. Collector Current. IC. 800. mAdc. Total Device Dissipation @ TA = 25oC.
DATA SHEET - ElectroSchematics.com
Collector -Emitter Voltage. VCEO. 40. V. Collector -Base Voltage. VCBO. 75. V. Emitter -Base Voltage. VEBO. 6.0. V. Collector Current Continuous.
2N2222A - ece.ucsb.ed
2N2219A and 2N2222A are Motorola designated preferred devices. Characteristic. Symbol. Min. Max. Unit. =.
2N2218A,2N2219,A* 2N2222,A
The information furnished in the Data Sheet and on the CDIL Web Site/CD are believed to be accurate and reliable. CDIL however, does not assume responsibility ...
2N2221 2N2222 - CDIL
Collector -Emitter Voltage. Collector -Base Voltage. Emitter -Base Voltage. Collector Current Continuous. Power Dissipation @Ta=25 degC.
2N2221, 2N2221A, 2N2222, 2N2222A, 2N2222MP datasheet Trans ...
ON CHARACTERISTICS. DC Current Gain. (IC = 0.1 mAdc, VCE = 10 Vdc). 2N2219,A, 2N2222,A. (IC = 1.0 mAdc, VCE = 10 Vdc). 2N2219,A, 2N2222,A.
motorola - Matthieu Benoit electrical engineering
Characteristic. Symbol. Max. Unit. Thermal Resistance, Junction to Ambient. R?JA. 200. °C/W. Thermal Resistance, Junction to Case.
2N2221A 2N2222A NPN SILICON TRANSISTOR JEDEC TO-18 CASE
DATA SHEET. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A, 2N2222A types are Silicon NPN Planar Epitaxial Transistors designed for small signal general ...