PDB3012HX4H
MMF50R280P is power MOSFET using Magnachip's advanced super junction technology that can realize very low on-resistance and gate charge.
P3MNC6P3 B01 DC-01555 - novitronicThe data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Parameter. BVDSS. RDS(ON). VGS(th). IDSS. RM60N80D3IDM. A. IAS. A. EAS. mJ. TJ, TSTG. °C. Pulsed Drain Current (3). 1313. Continuous Drain. Current (2). TC = 25°C. ID. 328. TC = 100°C. 232. W. TC = 100°C. 167. 60V 1.2m? TOLL N-Ch Power MOSFETPeak Drain Current, Pulsed 1). IDM. 360. A. Avalanche Current. IAS. 29. A. Single Pulse Avalanche Energy 2). EAS. 210. mJ. Power Dissipation. Tc = 25?. Ptot.
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