SR46N06T5
The test condition is VDD=25V, VGS=10V, IAS=24A, L=0.1mH. 3. The power dissipation is limited by 150oC junction temperature. 4. The data is theoretically ...
PDB3012HX4HMMF50R280P is power MOSFET using Magnachip's advanced super junction technology that can realize very low on-resistance and gate charge. P3MNC6P3 B01 DC-01555 - novitronicThe data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Parameter. BVDSS. RDS(ON). VGS(th). IDSS. RM60N80D3IDM. A. IAS. A. EAS. mJ. TJ, TSTG. °C. Pulsed Drain Current (3). 1313. Continuous Drain. Current (2). TC = 25°C. ID. 328. TC = 100°C. 232. W. TC = 100°C. 167.
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