Modeling the Reverse Gate-Leakage Current in GaN-Channel HFETs
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 40, NO. 11, NOVEMBER 1993. 0.31 volts respectively at 60 A/cm2, compared with 0.32 and 0.41 Volts for devices ...
Modeling of electron devices based on two-dimensional materialsIEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 36. NO. 12. DECEMBER 1989. Delay Time Studies and Electron Mobility. Measurement in an a-Si : H TFT. Abstract-The ... A new constant-field scaling theory for MOSFET'sIEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 71, NO. 10, OCTOBER 2024. 5925. Experimental Investigation of Drain Noise in. High Electron Mobility Transistors: ... Source to drain resistance beyond pinch-off in metal-oxide-semico ...IEEE Electron Device Letters (1980 - present). -. IEEE Trans. on Electron Devices (1954 - present). -. IEEE International Electron Devices Meeting (1955 - ...
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