Coherent transistor - Electron Devices, IEEE Transactions on

IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 42, NO. 9, SEPTEMBER 1995. Impact Ionization and Transport in the InAlAs/n+-InP HFET. David R. Greenberg, Student ...







Modeling the Reverse Gate-Leakage Current in GaN-Channel HFETs
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 40, NO. 11, NOVEMBER 1993. 0.31 volts respectively at 60 A/cm2, compared with 0.32 and 0.41 Volts for devices ...
Modeling of electron devices based on two-dimensional materials
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 36. NO. 12. DECEMBER 1989. Delay Time Studies and Electron Mobility. Measurement in an a-Si : H TFT. Abstract-The ...
A new constant-field scaling theory for MOSFET's
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 71, NO. 10, OCTOBER 2024. 5925. Experimental Investigation of Drain Noise in. High Electron Mobility Transistors: ...



Autres Cours:

Direct Observation of Self-Heating in III?V Gate-All-Around ...