Single Electron Charging Effects in Quantum Dot Nanostructures

narrow channel defined by split-gate technique in the inversion layer 2D electron gas of ... M. L. Huang, Y. C. Chang, C. H. Chang, T. D. Lin, J. Kwo ...







Ambipolar Independent Double Gate FET (Am-IDGFET) logic design
My work on singlet-triplet spin qubits has bridged between the eras of two different semiconductors, gallium arsenide (GaAs) and silicon germanium.
A CMOS dynamic random access architecture for radio-frequency ...
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Single 7.6A Peak Current Low-Side Gate Driver - Octopart
For example, in a commonly used single-shot readout method to determine the state of an electron spin, a few kHz signal is applied to the gate to load, read, ...
On-chip integration of Si/SiGe-based quantum dots and switched ...
Since ?GQ(t) effectively changes in a delta-function, the observed IDS(td) curves reflect the time evolution of the EMP pulse in the device.
Charge quantization and Kondo quantum criticality in few-channel ...
CircuiTikZ was initiated by Massimo Redaelli in 2007, who was working as a research assistant at the Polytechnic University of Milan, Italy, ...
3.3-kV 4H-SiC Split-Gate DMOSFET with Floating p+ Polysilicon for ...
The split outputs of the LM5114 offer flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance in either the turn- on ...
LM5114 Single 7.6A Peak Current Low-Side Gate Driver
The LM25139-Q1 is a 42V, synchronous, buck DC/DC controller with ultra-low IQ for single-output, high- current regulator circuits. Deriving from ...
LM5114 Single 7.6-A Peak Current Low-Side Gate Driver
The split outputs of the LM5114 offer flexibility to adjust the turnon and turnoff speed independently by adding additional impedance in either the turnon path ...
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