NIFT Placement Brochure 2024

Peak Drain Current, Pulsed. IDM. 612. A. Avalanche Current. IAS. 52. A. Single Pulse Avalanche Energy 1). EAS. 680. mJ. Power Dissipation. Tc = 25?. Ptot.







Semantic-based Building Information Modelling (BIM)
The UTC F05N60-TD is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode, is designed high voltage, high speed power switching ...
AOSP62530
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to.
SR46N06T5
The test condition is VDD=25V, VGS=10V, IAS=24A, L=0.1mH. 3. The power dissipation is limited by 150oC junction temperature. 4. The data is theoretically ...
PDB3012HX4H
MMF50R280P is power MOSFET using Magnachip's advanced super junction technology that can realize very low on-resistance and gate charge.
P3MNC6P3 B01 DC-01555 - novitronic
The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Parameter. BVDSS. RDS(ON). VGS(th). IDSS.
RM60N80D3
IDM. A. IAS. A. EAS. mJ. TJ, TSTG. °C. Pulsed Drain Current (3). 1313. Continuous Drain. Current (2). TC = 25°C. ID. 328. TC = 100°C. 232. W. TC = 100°C. 167.
60V 1.2m? TOLL N-Ch Power MOSFET
Peak Drain Current, Pulsed 1). IDM. 360. A. Avalanche Current. IAS. 29. A. Single Pulse Avalanche Energy 2). EAS. 210. mJ. Power Dissipation. Tc = 25?. Ptot.
SG46N10T5
... IAS=40A. 3. The power dissipation is limited by 150oC junction temperature. 4. The data is theoretically the same as ID and IDM, in real applications ...
N1MNB002 20V N-Channel MOSFETs
IDM Enterprise Specialized in Power Semiconductors ... IAS. 41.5. A. Single Pulse Avalanche Energy 2 ... td(on). 37 ns. Turn-On Rise Time at VGS = 10 V, VDS ...
UNISONIC TECHNOLOGIES CO., LTD 2N65-TD
The UTC 2N65-TD is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate.
GSFQ6904 - Good-Ark Semiconductor
The GSFQ6904 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and ...
P5MNC5P5B 30V N-Channel MOSFETs - novitronic
... IAS=42A, RG=25?, Starting TJ=25oC. 3. The data tested by pulsed , pulse width ? 300us , duty cycle ? 2%. 4. Essentially independent of operating ...