Hydrogen Plasma-Assisted Spatial Atomic Layer Deposition of SnOx

Growth rates for the 4d- and 5d-metal-based processes vary significantly, the lowest GPC value being 0.1 Å per cycle for the TDMASn + EG and ...







Atomic/Molecular Layer Deposition for Designer's Functional Metal ...
This article describes a new atomic layer deposition (ALD) method for preparing indium tin oxide (ITO) thin films using nonhalogenated precursors.
Atomic Layer Deposition of Indium Tin Oxide Thin Films Using ...
Tetrakisdimethylamino?tin(IV) (TDMASn) and hydrogen peroxide (H2O2) as tin precursor and ... Bakr, T.D. Anthopoulos, M. Lanza, O.F.. Mohammed, F.
Elucidating Interfacial Limitations Induced by Tin Oxide Electron ...
Processing parameters of ALD-SnO2 layer used for all-perovskite tandem solar cells. Chamber. Temp. (°C). TDMASn. Source. Temp. (°C). TDMASn pulse time. (s).
Etude de l'influence d'une intégration par ALD d'une couche ...
TDMASn. Cet ordre a été choisi pour augmenter les groupes hydroxyles en surface du substrat et ainsi favoriser l'adsorption du précurseur en début de ...
Atomic layer deposition of tin oxide films using tetrakis ...
TDMASn is a liquid at room temperature, and at 40 °C the vapor pressure is ?0.04 Torr. The TDMASn is held in a stainless steel bubbler maintained at 40 °C, and ...
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