Using APL format
InAs photovoltaic detectors have high sensitivity in the infrared region ... (Td=25 °C). P10090-11. (Td=-10 °C). Wavelength (µm). Photo sensitivity (A/W. ).
Transport électronique quasi-balistique dans les nanofils d'InAs et d ...Therefore, a thicker InAs buffer doesn't improve the surface roughness but decreases the TD density. The difference in the. I-V characteristics of the HBTDs is ... InAs photovoltaic detectors P10090 series, P7163Here, the operation of a field-effect transistor based on a single InAs nanowire gated by an ionic liquid is reported. Liquid gating yields very. Effect of Buffer Quality on the Performance of InAs/AlSb ...InAs photovoltaic detectors have high sensitivity in the infrared region around 3 ?m as with PbS photoconductive detectors, and also feature low noise, ...
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