Total Dose Effects in Electronic Devices and Circuits - Agenda INFN

PECTA analyzes WBG-based devices, supported by Swiss research, focusing on measurement concepts, loss assessments, and a deep understanding of the WBG device ...







Development of AIGaN/GaN HBTs and HFETs for High Power and ...
Abstract? We investigate a mechanism for greatly improving switching speed in contact-controlled thin-film transistors (TFTs), which have ...
GaN HBT: toward an RF device - ece.ucsb.edu
IEEE Transactions on Electron Devices 69,. 1945-1949 (2022). Page 29. 103 Wong, M. H., Sasaki, K., Kuramata, A., Yamakoshi, S. & Higashiwaki, M. Field-plated.
Low-Frequency Noise in InGaAs-OI Transistors
IEEE Transactions on Electron Devices, 2022, https://doi.org/10.1109/TED.2021.3136150. [3] A. G. Viey et al. IEEE Transactions on Electron ...



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Electronics and Packaging Intended for Emerging Harsh ...