SG46N10T5
... IAS=40A. 3. The power dissipation is limited by 150oC junction temperature. 4. The data is theoretically the same as ID and IDM, in real applications ...
N1MNB002 20V N-Channel MOSFETsIDM Enterprise Specialized in Power Semiconductors ... IAS. 41.5. A. Single Pulse Avalanche Energy 2 ... td(on). 37 ns. Turn-On Rise Time at VGS = 10 V, VDS ... UNISONIC TECHNOLOGIES CO., LTD 2N65-TDThe UTC 2N65-TD is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate. GSFQ6904 - Good-Ark SemiconductorThe GSFQ6904 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and ...
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