IEEE ELECTRON DEVICES SOCIETY
Ill-Nitride, SiC, and diamond materials for electronic devices : symposium held April 8-12, 1996, San Francisco, California, U.S.A. / editors,. Coherent transistor - Electron Devices, IEEE Transactions on
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 42, NO. 9, SEPTEMBER 1995. Impact Ionization and Transport in the InAlAs/n+-InP HFET. David R. Greenberg, Student ... 2011 IEEE International Electron Devices Meeting (IEDM 2011)
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 71, NO. 9, SEPTEMBER 2024. Impact of Process Sequence and Device. Architecture on Mechanical ... Experimental Investigation of Drain Noise in High Electron Mobility ...
This index covers all technical items ? papers, correspondence, reviews, etc. ? that appeared in this periodical during 2015, and items from previous. Experimental Investigation of Drain Noise in High Electron Mobility ...
This index covers all technical items ? papers, correspondence, reviews, etc. ? that appeared in this periodical during 2015, and items from previous. High voltage implanted RESURF p-LDMOS using BiCMOS technology
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 71, NO. 9, SEPTEMBER 2024. Impact of Process Sequence and Device. Architecture on Mechanical ... A new constant-field scaling theory for MOSFET's
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 71, NO. 10, OCTOBER 2024. 5925. Experimental Investigation of Drain Noise in. High Electron Mobility Transistors: ... Modeling the Reverse Gate-Leakage Current in GaN-Channel HFETs
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 40, NO. 11, NOVEMBER 1993. 0.31 volts respectively at 60 A/cm2, compared with 0.32 and 0.41 Volts for devices ... 4E Power Electronic Conversion Technology Annex (PECTA)
in MOS Devices,? IEEE Transactions on Electron Devices, vol. 46, no. 2, pp. 383?387, 1999. 21, 22. [7] J. Sune, P. Olivo, and B. Ricco., ?Quantum-Mechanical ... Impact of aging on the behaviour of wild band gap power transistors ...
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 40, NO. 11, NOVEMBER 1993. 0.31 volts respectively at 60 A/cm2, compared with 0.32 and 0.41 Volts for devices ... Electron Saturation Velocity Variation in InGaAs and GaAs Channel ...
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 63, NO. 7, JULY 2016. Remote Gate-Controlled Negative Transconductance in Gated MIS Tunnel Diode.
