RM60N80D3
IDM. A. IAS. A. EAS. mJ. TJ, TSTG. °C. Pulsed Drain Current (3). 1313. Continuous Drain. Current (2). TC = 25°C. ID. 328. TC = 100°C. 232. W. TC = 100°C. 167.
60V 1.2m? TOLL N-Ch Power MOSFETPeak Drain Current, Pulsed 1). IDM. 360. A. Avalanche Current. IAS. 29. A. Single Pulse Avalanche Energy 2). EAS. 210. mJ. Power Dissipation. Tc = 25?. Ptot. SG46N10T5... IAS=40A. 3. The power dissipation is limited by 150oC junction temperature. 4. The data is theoretically the same as ID and IDM, in real applications ... N1MNB002 20V N-Channel MOSFETsIDM Enterprise Specialized in Power Semiconductors ... IAS. 41.5. A. Single Pulse Avalanche Energy 2 ... td(on). 37 ns. Turn-On Rise Time at VGS = 10 V, VDS ...
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