LVH150G1202 LVH150G1202Z*(1) Preliminary data SUSPM2
@Tj = 150 °C, TC = 70 °C, Continuous. 150. A. ICM. @TC = 70 °C, tP = 1ms. 300. A. TSC. Chip Level, @Tj = 150 °C, VGE = 15 V, VCES < 1200 V. 10. µs. Tj.
DDB6U30N08VRtp = 10 ms, Tvj = 25°C tp = 10 ms, Tvj = 150°C. IFsM. 310. 250. A. A ... td on. 0,018. 0,018. µs. µs. Tvj = 25°C. Tvj = 125°C. Anstiegszeit (induktive Last) rise ... 10-PG06PPA050SJ01-LH54E08T - VincotechBase isolation: Al2O3. ? Convex shaped substrate for superior thermal contact. ? Thermo-mechanical push-and-pull force relief. P-CHANNEL MOSFET - Micro Commercial ComponentsTC = 70 °C, Tvj = 150 °C. 1600. A. Peak collector current. ICM tp = 1 ms. 3200. A. Gate-emitter voltage. VGES. -20. 20. V. Total power dissipation. Ptot. TC = ...
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