Ionic liquid gating of InAs nanowire-based field effect transistors

However, the InAs/InGaAsP material system usually has poor temperature stability with a characteristic temperature of only 25?50 K at room.







3 From Basic Physical Properties of InAs/InP Quantum Dots to State ...
de dépolarisation Td obtenus par l'ajustement à notre modèle pour les deux valeurs de champ magnétique 11. Nous trouvons que : Td(0.24 T)/Td(0. T) ? 1.5.
Benoît EBLE Interaction hyperfine dans les boîtes quantiques d'InAs ...
GaAs tunnel diodes (TDs) embedded with an InAs quantum dot (QD) layer were grown and their performance was compared with that of TDs without a QD layer.
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Effect of Buffer Quality on the Performance of InAs/AlSb ...