GaN HBT: toward an RF device - ece.ucsb.edu

IEEE Transactions on Electron Devices 69,. 1945-1949 (2022). Page 29. 103 Wong, M. H., Sasaki, K., Kuramata, A., Yamakoshi, S. & Higashiwaki, M. Field-plated.







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in MOS Devices,? IEEE Transactions on Electron Devices, vol. 46, no. 2, pp. 383?387, 1999. 21, 22. [7] J. Sune, P. Olivo, and B. Ricco., ?Quantum-Mechanical ...
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Development of AIGaN/GaN HBTs and HFETs for High Power and ...